inchange semiconductor isc product specification isc website www.iscsemi.cn isc triacs TIC225M features with to-220 package sensitive gate triacs glass passivated max i gt of 5 ma (quadrants 1) absolute maximum ratings(ta=25 ) symbol parameter min unit v drm repetitive peak off-state voltage 600 v v rrm repetitive peak reverse voltage 600 v i t(rms) rms on-state current (full sine wave)t c =70 8 a i tsm non-repetitive peak on-state current 70 a t j operating junction temperature 110 t stg storage temperature -45~150 r th(j-c) thermal resistance, junction to case 2.5 /w r th(j-a) thermal resistance, junction to ambient 62.5 /w electrical characteristics (t c =25 unless otherwise specified) symbol parameter conditions max unit i drm repetitive peak off-state current v d =v drm , t c =110 2.0 ma i gt gate trigger current v supply = 12 v?; r l = 10 ; t p(g) > 20 s 5 ma 20 10 30 i h holding current v supply = 12 v? , i g = 0 initial i tm = 100ma 20 ma v gt gate trigger voltage all quadrant v supply = 12 v?; r l = 10 ; t p(g) > 20 s 2 v v tm on-state voltage i t = 12a; i g = 50ma 2.1 v
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